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| SUM110N04-02L New Product Vishay Siliconix N-Channel 40-V (D-S) 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.0023 @ VGS = 10 V 0.0038 @ VGS = 4.5 V ID (A) 110 a D TrenchFETr Power MOSFET D 200_C Junction Temperature D New Package with Low Thermal Resistance APPLICATIONS D Automotive - ABS - 12-V EPS - Motor Drives D TO-263 G G DS S N-Channel MOSFET Top View SUM110N04-02L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 110a 110a 440 75 280 437.5c 3.75 -55 to 200 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70763 S-04970--Rev. B, 29-Oct-01 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.4 Unit _C/W _ 1 SUM110N04-02L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 200_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 200_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.00185 0.0031 0.0023 0.0038 0.0037 0.0046 S W 40 V 1 3 100 1 50 10 nA mA m mA A Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.27 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 110 A VGS = 0 V, VDS = 25 V, f = 1 MHz 7300 1380 930 165 25 55 30 80 155 120 45 120 230 180 ns 250 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 85 A, di/dt = 100 A/ms m IF = 85 A, VGS = 0 V 1.1 60 2.6 0.08 110 240 1.5 90 4 0.15 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70763 S-04970--Rev. B, 29-Oct-01 SUM110N04-02L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 5 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 150 100 4V 100 TC = 125_C 50 25_C 50 3V 0 0 2 4 6 8 10 -55_C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 300 TC = -55_C r DS(on) - On-Resistance ( W ) 250 g fs - Transconductance (S) 25_C 200 125_C 150 0.004 On-Resistance vs. Drain Current VGS = 4.5 V 0.003 VGS = 10 V 0.002 100 0.001 50 0 0 20 40 60 80 100 120 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 12000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 10000 C - Capacitance (pF) Ciss 16 VDS = 30 V ID = 110 A 8000 12 6000 8 4000 Coss 2000 Crss 0 0 8 16 24 32 40 4 0 0 60 120 180 240 300 VDS - Drain-to-Source Voltage (V) Document Number: 70763 S-04970--Rev. B, 29-Oct-01 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N04-02L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 1.6 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.2 TJ = 150_C 10 TJ = 25_C 0.8 0.4 0.0 -50 -25 0 25 50 75 100 125 150 175 200 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 60 Drain Source Breakdown vs. Junction Temperature 100 I Dav (a) V (BR)DSS (V) IAV (A) @ TA = 25_C 55 ID = 10 mA 10 IAV (A) @ TA = 150_C 50 1 45 0.1 0.00001 0.0001 0.001 0.01 0.1 1 40 -50 -25 0 25 50 75 100 125 150 175 200 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 70763 S-04970--Rev. B, 29-Oct-01 SUM110N04-02L New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 120 1000 Vishay Siliconix Safe Operating Area 100 100 I D - Drain Current (A) 80 I D - Drain Current (A) Limited by rDS(on) 10 10 ms 100 ms 1 ms 10 ms 100 ms dc 60 40 1 20 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 200 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 70763 S-04970--Rev. B, 29-Oct-01 www.vishay.com 5 |
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